LED explosion-proof lamp light emitting principle introduction and advantages

Explosion-proof LED light source advantages explain:

LED explosion-proof lamp and gas discharge explosion-proof lamp work the same, the difference is that LED explosion-proof lamp is more energy-efficient and safer. LED explosion-proof lights are generally do explosion-proof type, but LED is also intrinsically safe explosion-proof lamp, as long as the LED input power box to do explosion-proof, LED power supply output is DC35V voltage, generally can not produce EDM, LED chip maximum temperature is only possible More than two hundred degrees, generally do not detonate combustible gas, so the LED is intrinsically safe explosion-proof lights. Explosion-proof and intrinsically safe, LED explosion-proof lamps are safer than gas-discharge explosion-proof lamps.

LED explosion-proof lamp lighting principle:

An LED, a light emitting diode, is a solid state semiconductor device that can directly convert electrical energy into light. The core of the LED is a semiconductor wafer. The semiconductor wafer consists of two parts. One wind is a P-type semiconductor. In it, holes are dominant, and the other end is an N-type semiconductor. When they get up, a PN junction is formed between them. When the current is applied to the wafer through the wire, the electrons are pushed to the P area. In the P area, the electron hole recombines and emits visible light in the form of photons.

The light emitting diode is made of III-IV compound such as GaAs (gallium arsenide), GaP (gallium phosphide), GaAsP (phosphorus gallium arsenide) and other semiconductors, and its core is a PN junction. Therefore, it has the IN characteristic of a normal PN junction, ie, forward conduction, reverse blocking, and breakdown characteristics. In addition, under certain conditions, it also has luminescent properties. At the forward voltage, electrons are injected into the P region from the N region and holes are injected into the N region from the P region. A part of the minority carriers (low births) entering the opponent's area is combined with majority carriers (multiple sons) to emit light.

Assuming that the light emission occurs in the P region, the injected electrons directly recombine with the valence band holes to emit light, or they are first captured by the light emission center and then recombine with the holes to emit light. In addition to this light-emitting compound, some electrons are trapped by non-luminous centers (the center is located near the middle of the conduction band and the intermediate zone), and then recombine with the holes. Each release of energy is not large enough to form visible light. The greater the ratio of the amount of emitted light relative to the amount of non-light emitting complex, the higher the light quantum efficiency. Since recombination emits light in the minority scattering region, light is generated only within a few μm of the PN junction surface.

Theory and practice have proved that the peak wavelength λ of light is related to the bandgap Eg of the semiconductor material in the light emitting region, that is, λ≈1240/Eg (mm).

The unit of Eg in the formula is electron volts (eV). If it can produce visible light (wavelength from 380nm violet to 780nm red), the Eg of the semiconductor material should be between 3.26 ~ 1.63eV. The light longer than the red wavelength is infrared light. There are now infrared, red, yellow, green and blue light emitting diodes, but the cost and price of the blue diodes are high and they are not widely used.